Impact of Bonding Sequence on Contact Resistance in Hybrid Bonding of Via-middle TSV Wafer

Abstract This study examines the impact of bonding sequence on contact resistance in hybrid a via-middle Cu though-silicon via (TSV) wafer. Hybrid was performed at room temperature surface-activated method using an ultrathin Si film. Comparative various sequences revealed that (a) cleaning target Si, TSV, and electrode wafers with Ar fast atom beam (FAB), (b) transferring wafer into another chamber during TSV wafer, (c) to while were all effective decreasing oxygen atoms interface (amorphous layer) reducing resistances between TSVs electrodes.